| PART |
Description |
Maker |
| KM23V64000T |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M(8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MC-4R128CPE6C-653 MC-4R128CPE6C-745 MC-4R128CPE6C- |
64M X 16 DIRECT RAMBUS DRAM MODULE, 1.5 ns, DMA184
Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 16-BIT)
Direct Rambus垄芒 DRAM RIMM垄芒 Module 128M-BYTE (64M-WORD x 16-BIT)
|
ELPIDA MEMORY INC
|
| UPD23C64000JLGX-XXX UPD23C64000JLGY-XXX-MJH UPD23C |
64M-bit (8M-wordx8-bit/4M-wordx16-bit) Mask ROM
|
NEC
|
| K9K1G16U0A |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory 128M的8 64米16位NAND闪存
|
Samsung Semiconductor Co., Ltd.
|
| MX23L6410 23L6410 |
64M-BIT Mask ROM (8/16 Bit Output)
From old datasheet system
|
Macronix 旺宏
|
| K9F1216U0A |
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
|
Samsung Electronic
|
| MX29LV320MTXI-70G MX29LV641MLTI-90 MX29LV640MLTC-9 |
64M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY 6400位单电压3V时仅均匀部门闪存
64M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
64M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY 4M X 16 FLASH 3V PROM, 90 ns, PDSO56
|
Macronix International Co., Ltd.
|
| MC-4R64CPE6C-653 MC-4R64CPE6C-745 MC-4R64CPE6C MC- |
Direct Rambus DRAM RIMM Module 64M-BYTE (32M-WORD x 16-BIT)
Direct Rambus?/a> DRAM RIMM?/a> Module 64M-BYTE (32M-WORD x 16-BIT)
Direct Rambus垄芒 DRAM RIMM垄芒 Module 64M-BYTE (32M-WORD x 16-BIT)
|
http://
Elpida Memory
|
| UPD4664312F9-BE75X-CR2 UPD4664312F9-B65X-CR2 UPD46 |
64M-bit(4M-word x 16-bit)MOBILE SPECIFIED RAM
|
NEC
|
| UPD29F064115GZ-DB80X-MJH UPD29F064115GZ-DB85X-MJH |
64M-bit(4M-wordx16-bit)Flash memory
|
NEC
|
| M390S6450BT1 |
64M x 72 SDRAM DIMM with PLL & Register based on 64M x 4, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
